Out of Stock

SPST MOSFET Switch (H0FR7)

$17.00

SKU: H0FR7 Category: Tags: , , , , , , , ,

SPST 18V/20A MOSFET Switch

Stage: Testing

Out of stock

Description

H0FR7 is a Single Pole Single Throw (SPST) 18V/20A MOSFET Switch module, based on STMicroelectronics STD36P4LLF6 MOSFET P transistor, bidirectional current sense amplifier INA199A2DCKT, and STM32G0 MCU. 

  • The switch is SPST (Single Pole Single Throw) type STD36P4LLF6 :
    • This device is a P-channel Power MOSFET developed using the STripFET™ F6 technology, with a new trench gate structure. The resulting Power MOSFET exhibits very low RDS (on) in all packages.
  • The voltage-output, current-shunt monitors (also called current-sense amplifiers) are commonly used for overcurrent protection, precision-current measurement for system optimization, or in closed-loop feedback circuits. 
    • These devices operate from a single 2.7-V to 26-V power supply, drawing a maximum of 100 µA of supply current. All versions are specified from –40 °C to 125 °C, and offered in both SC70-6 and thin UQFN-10 packages.
  • The switching time of the switch is very low > 60nS, so thanks to the small size and the highly efficient driver PMD3001D IC, the module can be used in applications that require fast switching times.

Specifications

Front-end

  • STMicroelectronics STD36P4LLF6 MOSFET P transistor:
    • Very low on-resistance.
    •  Very low gate charge.
    • High avalanche ruggedness.
    • Low gate drive power loss.
  • 26V, bi-directional current sense amplifier INA199A2DCKT:
    • Wide Common-Mode Range: –0.3 V to 26 V.
    • Offset Voltage: ±150 µV (Maximum)
      (Enables Shunt Drops of 10-mV Full-Scale)
    • Accuracy:
      • Gain Error (Maximum Over Temperature):
        • ±1% (C Version)
        • ±1.5% (A and B Versions)
      • 0.5-µV/°C Offset Drift (Maximum)
      • 10-ppm/°C Gain Drift (Maximum)
    • Choice of Gains:
      • INA199x1: 50 V/V
      • INA199x2: 100 V/V
      • INA199x3: 200 V/V
    • Quiescent Current: 100 µA (Maximum)
  • PMD3001D MOSFET Driver:
    • NPN/PNP transistor pair connected as push-pull driver in a SOT457 (SC-74)
      Surface-Mounted Device (SMD) plastic package that features:

      • Low VCEsat Breakthrough In Small Signal (BISS) transistors in push-pull configuration
      • Application-optimized pinout
      • Space-saving solution
      • Internal connections to minimize layout effort
      • Reduces component count

Back-end

  • STM32G0B1CEU6N 32-bit ARM Cortex-M0 MCU.
  • 8MHz external oscillator.
  • Five array ports and four power ports (+3.3V and GND).
  • Access to 5xUART, SWD, BOOT0, RESET.

Physical Properties

  • Shape: Hexagon
  • Size: 30 mm short diagonal, 17.32 mm side
  • Area: 7.8 cm^2
  • Weight: 1.3 g
  • Soldermask Color: Dark green
  • Surface Finish: ENIG (gold) or HASL-LF (tin)

Hardware Release Notes

H0FR70

  • Initial hardware release.

H0FR71

    • Changed the STM32F091CBU6 MCU to STM32G0B1CEU6N.
    • A high-efficiency MOSFET gate driver circuit has been added, based on PMD3001D driver IC.

Projects

Please visit this product projects on Hackster.io network.

BOM

H0FR70 BOM

Quickstart Guide

Download a PDF version here.

FAQ

Frequently Asked Questions

 

Have more questions? Please check our main FAQ page and feel free to contact us for any unanswered questions.

Factsheet

Download a PDF version here.

Resources

  • Schematics (PDF)
  • Hardware Design Files (Eagle)
  • Source Code (GitHub). Download a pre-compiled firmware HEX file here.
  • Documentation / Factsheet (PDF)
  • Projects & Examples: Please check our account on Hackster.io for demo projects and examples.