20V/20A DC & PWM Switch (H0FR7)

Specifications

Front-end

• STMicroelectronics STD36P4LLF6 MOSFET P transistor:
  • Very low on-resistance.
  •  Very low gate charge.
  • High avalanche ruggedness.
  • Low gate drive power loss.
• 26V, bi-directional current sense amplifier INA199A2DCKT:
  • Wide Common-Mode Range: –0.3 V to 26 V.
  • Offset Voltage: ±150 µV (Maximum)
    (Enables Shunt Drops of 10-mV Full-Scale)
  • Accuracy:
    • Gain Error (Maximum Over Temperature):
      • ±1% (C Version)
      • ±1.5% (A and B Versions)
    • 0.5-µV/°C Offset Drift (Maximum)
    • 10-ppm/°C Gain Drift (Maximum)
  • Choice of Gains:
    • INA199x1: 50 V/V
    • INA199x2: 100 V/V
    • INA199x3: 200 V/V
  • Quiescent Current: 100 µA (Maximum)

• PMD3001D MOSFET Driver:
  • NPN/PNP transistor pair connected as push-pull driver in a SOT457 (SC-74)
    Surface-Mounted Device (SMD) plastic package that features:
    • Low VCEsat Breakthrough In Small Signal (BISS) transistors in push-pull configuration
    • Application-optimized pinout
    • Space-saving solution
    • Internal connections to minimize layout effort
    • Reduces component count

Back-end

• STM32G0B1CEU6N 32-bit ARM Cortex-M0 MCU.
• 8MHz external oscillator.
• Five array ports and four power ports (+3.3V and GND).
• Access to 5xUART, SWD, BOOT0, RESET.

Physical Properties

• Shape: Hexagon
• Size: 30 mm short diagonal, 17.32 mm side
• Area: 7.8 cm^2
• Weight: 1.3 g
• Soldermask Color: Dark green
• Surface Finish: ENIG (gold) or HASL-LF (tin)

Hardware Release Notes

H0FR70

• Initial hardware release.

H0FR71

• • Changed the STM32F091CBU6 MCU to STM32G0B1CEU6N.
  • A high-efficiency MOSFET gate driver circuit has been added, based on PMD3001D driver IC.