20V/20A DC & PWM Switch (H0FR7)

Specifications

Front-end

STMicroelectronics STD36P4LLF6 MOSFET P transistor:

• • Very low on-resistance.
  •  Very low gate charge.
  • High avalanche ruggedness.
  • Low gate drive power loss.

26V, bi-directional current sense amplifier High-Bandwidth Operational Amplifier TSV772IYDT:

• 20 MHz gain bandwidth product
• Low offset voltage: ±200 µV (max)
• Rail-to-rail input/output
• Operating voltage: 1.8V to 5.5V
• Temperature range: -40°C to +125°C
• Slew rate: 10 V/µs
• DFN8 package (2×2 mm)

PMD3001D MOSFET Driver:

• • NPN/PNP transistor pair connected as push-pull driver in a SOT457 (SC-74)
    Surface-Mounted Device (SMD) plastic package that features:
    • Low VCEsat Breakthrough In Small Signal (BISS) transistors in push-pull configuration
    • Application-optimized pinout
    • Space-saving solution
    • Internal connections to minimize layout effort
    • Reduces component count

Back-end

• STM32G0B1CEU6N 32-bit ARM Cortex-M0 MCU.
• 8MHz external oscillator.
• Five array ports and four power ports (+3.3V and GND).
• Access to 5xUART, SWD, BOOT0, RESET.

Physical Properties

• Shape: Dual-hexagon
• Size:  60 mm short diagonal, 17.32 mm side
• Area:  15.6 cm^2
• Weight: 20 g
• Soldermask Color: Dark green
• Surface Finish: ENIG (gold) or HASL-LF (tin)

Hardware Release Notes

H0FR70

• Initial hardware release.

H0FR71

• Changed the STM32F091CBU6 MCU to STM32G0B1CEU6N.
• A high-efficiency MOSFET gate driver circuit has been added, based on PMD3001D driver IC.

H0FR72

• Input Filter added to current-sense circuit.
• Layout Improvements (shorter/wider gate drive traces, smaller passive components).
• Power Supply Enhancements (decoupling caps for driver IC, large bulk cap on main supply).
• External Voltage Reference connection implemented for ADC accuracy.

H0FR73 

• Replaced INA199A2DCKT with TSV772IYDT operational amplifier
• Updated voltage rating from 18V to 20V
• Added PWM control capability (0-30 kHz)
• Enhanced current monitoring accuracy